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| Bulletin I27235 07/06 GA200SA60SP INSULATED GATE BIPOLAR TRANSISTOR Features * Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz * Lowest conduction losses available * Fully isolated package ( 2,500 volt AC) * Very low internal inductance ( 5 nH typ.) * Industry standard outline * UL pending * Totally Lead-Free C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 100A n-channel Benefits * Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating * Easy to assemble and parallel * Direct mounting to heatsink * Plug-in compatible with other SOT-227 packages SOT-227 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV VISOL PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw Max. 600 200 100 400 400 20 155 2500 630 250 -55 to + 150 -55 to + 150 12 lbf *in(1.3N*m) Units V A V mJ V W C Thermal Resistance Parameter RJC RCS Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Weight of Module Typ. --- 0.05 30 Max. 0.20 --- --- Units C/W gm www.irf.com 1 GA200SA60SP Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 -- -- V VGE = 0V, IC = 1.0A V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.62 -- V/C VGE = 0V, IC = 1.0mA -- 1.10 1.3 IC = 100A VGE = 15V Collector-to-Emitter Saturation Voltage -- 1.33 -- IC = 200A See Fig.2, 5 VCE(ON) V -- 1.02 -- IC = 100A , TJ = 150C VGE(th) Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -10 -- mV/C VCE = VGE, IC = 2 mA gfe Forward Transconductance 90 150 -- S VCE = 100V, IC = 100A -- -- 1.0 VGE = 0V, VCE = 600V mA ICES Zero Gate Voltage Collector Current -- -- 10 VGE = 0V, VCE = 10V, TJ = 150C IGES Gate-to-Emitter Leakage Current -- -- 250 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 15 ) VCC = 80%(V CES), VGE = 20V, L = 10H, RG = 2.0, (See fig. 14) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max. Units Conditions 1200 IC = 100A 150 nC VCC = 400V See Fig. 8 380 VGE = 15V -- -- TJ = 25C ns 1300 IC = 100A, VCC = 480V 580 VGE = 15V, RG = 2.0 -- Energy losses include "tail" -- mJ See Fig. 9, 10, 13 25.5 -- TJ = 150C, -- IC = 100A, VCC = 480V ns -- VGE = 15V, RG = 2.0 -- Energy losses include "tail" -- mJ See Fig. 10,11, 13 -- nH Between lead, and center of the die contact 16250 -- VGE = 0V 1040 -- pF VCC = 30V See Fig. 7 190 -- = 1.0MHz Typ. 770 100 260 78 56 890 390 0.98 17.4 18.4 72 60 1500 660 35.7 5.0 Pulse width 5.0s, single shot. 2 www.irf.com GA200SA60SP 250 For both: Triangular wave: 200 Load Current ( A ) Power Dissipation = 140W 150 Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Clamp voltage: 80% of rated Square wave: 60% of rated voltage 100 50 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 150 C 100 TJ = 150 C TJ = 25 C 100 TJ = 25 C 10 1 0.5 V GE = 15V 20s PULSE WIDTH 1.0 1.5 2.0 2.5 10 V CC = 50V 5s PULSE WIDTH 5 6 7 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA200SA60SP 200 3.0 Maximum DC Collector Current(A) 150 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH 100 2.0 IC = 400 A 50 IC = 200 A IC = 100 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D =t 1 / t2 2. Peak T= PDM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA200SA60SP 30000 VGE , Gate-to-Emitter Voltage (V) 24000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V 100A I C = 110A 16 C, Capacitance (pF) Cies 18000 12 12000 Coes Cres 8 6000 4 0 1 10 100 0 VCE , Collector-to-Emitter Voltage (V) 0 200 400 600 800 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 25 Total Switching Losses (mJ) 23 22 21 20 19 18 Total Switching Losses (mJ) V CC = 480V V GE = 15V 24 TJ = 25 C I C = 200A 1000 RG == 2.0 Ohm G VGE = 15V VCC = 480V IC = 350A 400A 100 IC = 200A IC = 100A 0 10 20 30 40 50 ( RG , Gate Resistance (Ohm) ) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA200SA60SP 160 Total Switching Losses (mJ) 120 I C , Collector Current (A) RG ==2.0 RG Ohm T J = 150 C VCC = 480V VGE = 15V 1000 VGE = 20V T J = 125 oC 100 80 10 40 SAFE OPERATING AREA 0 100 1 150 200 250 300 350 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA 6 www.irf.com GA200SA60SP L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X IC@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff www.irf.com 7 GA200SA60SP SOT-227 Package Details Dimensions are shown in millimeters ( inches ) 4.40 (.173 ) 4.20 (.165 ) 4 38.30 ( 1.508 ) 37.80 ( 1.488 ) -A3 CHAMFER 2.00 ( .079 ) X 457 LEAD ASSIGMENTS E C 4 1 E S C D 3 2 6.25 ( .246 ) 12.50 ( .492 ) 25.70 ( 1.012 ) 25.20 ( .992 ) -B4 1 EG IGBT A1 K2 3 2 K1 A2 HEXFRED S E G HEXFET IGBT 1 7.50 ( .295 ) 30.20 ( 1.189 ) 29.80 ( 1.173 ) 4X 2.10 ( .082 ) 1.90 ( .075 ) 2 R FULL 15.00 ( .590 ) 8.10 ( .319 ) 7.70 ( .303 ) 0.25 ( .010 ) M C A M B M 2.10 ( .082 ) 1.90 ( .075 ) -C0.12 ( .005 ) 12.30 ( .484 ) 11.80 ( .464 ) Tube QUANTITIES PER TUBE IS 10 M4 SREW AND WASHER INCLUDED 8 www.irf.com GA200SA60SP Ordering Information Table Device Code G 1 A 2 200 3 S 4 A 5 60 6 S 7 P 8 1 2 3 4 5 6 7 8 - Insulated Gate Bipolar Transistor (IGBT) Gen. 4, IGBT Sicilon, DBC Construction Current Rating (200 = 200A) Single switch, no diode SOT-227 Voltage Rating (60 = 600V) Speed/ Type (S = Standard Speed) none = Standard Production P = Lead-Free Data and specifications subject to change without notice. This product has been designed for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/06 www.irf.com 9 |
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